Thin film transistor, method of manufacturing the same, and flat panel display device having the same

ABSTRACT

A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×10 13  to 1×10 18  #cm −3  by controlling an amount of Zr.

CLAIM OF PRIORITY

This application makes reference to, incorporates the same herein, andclaims all benefits accruing under 35 U.S.C. §119 from an applicationfor THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLATPANEL DISPLAY HAVING THE SAME earlier filed in the Korean IntellectualProperty Office on 5 Jan. 2008 and there duly assigned Serial No.10-2008-0011492.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film transistor (TFT), a methodof manufacturing the thin film transistor, and a flat panel display(FPD) device including the thin film transistor, and more particularly,to a TFT using oxide semiconductor as an active layer, a method ofmanufacturing the thin film transistor (TFT), and a FPD device includingthe thin film transistor (TFT).

2. Description of the Related Art

In general, a thin film transistor (TFT) includes an active layer whichprovides a channel region, a source region and a drain region, and agate electrode electrically insulated from the active layer by aninsulating layer with the gate electrode being formed on the channelregion.

The active layer of the TFT having the above mentioned structure may beformed of a semiconductor material such as amorphous silicon orpoly-silicon. When the active layer is formed of the amorphous silicon,the mobility of the TFT is relatively low so that it is difficult torealize a driving circuit that operates at a high speed. When the activelayer is formed of the poly-silicon, even though the mobility of the TFTis relatively high, a threshold voltage may be disadvantageouslynon-uniform so that an additional compensating circuit is required.

In addition, in a contemporary method of manufacturing the TFT using lowtemperature poly-silicon (LTPS), because an expensive process such as alaser heat treatment may be included and may be difficult to controlcharacteristics, it is difficult to apply the expensive method tofabricate TFT on a large area substrate.

Recently, in order to solve the above stated problems, research has beenperformed to employ an oxide semiconductor as the active layer.

In Japanese Patent Publication No. 2004-273614, a TFT using oxidesemiconductor in which Zinc Oxide (ZnO) is a main component as an activelayer is disclosed.

The oxide semiconductor in which the ZnO is the main component isevaluated as an amorphous and stable material. When the oxidesemiconductor is employed to form the active layer, it is possible tomanufacture the TFT by using the low temperature poly-silicon (LTPS)process at a low temperature not higher than 300° C.

In order to apply the oxide semiconductor in which the ZnO is the maincomponent to during fabricating the TFT, however, it is necessary todevelop a process to enhance an electric characteristic of the TFT andthus improving the electric characteristic of the TFT.

SUMMARY OF THE INVENTION

It is therefore one object of the present invention to provide a thinfilm transistor, a method of manufacturing the thin film transistor anda flat panel display having the thin film transistor in order to enhancean electric characteristic of the TFT.

It is another object of the present invention to provide a thin filmtransistor capable of easily controlling the carrier density of an oxidesemiconductor layer, a method of manufacturing the thin film transistor,and a flat panel display (FPD) device including the thin filmtransistor.

In order to achieve the foregoing and other objects of the presentinvention, according to an aspect of the present invention, a thin filmtransistor (TFT) may be constructed with a substrate, a gate electrodeformed on the substrate, an oxide semiconductor layer electricallyinsulated from the gate electrode by a gate insulating layer andincluding a channel region, a source region, and a drain region, and asource electrode and a drain electrode respectively electricallycontacting the source region and the drain region. The oxidesemiconductor layer may be formed of an IZO layer including Zr. IZOrefers to InZnO which is indium zinc oxide.

According to another aspect of the present invention, a method ofmanufacturing a TFT contemplates forming a gate electrode on asubstrate, forming a gate insulating layer including the gate electrodeon the substrate, forming an oxide semiconductor layer that provides achannel region, a source region, and a drain region on the gateinsulating layer, and forming a source electrode and a drain electrodethat contact the source region and the drain region. In forming an oxidesemiconductor layer that provides a channel region, a source region, anda drain region on the gate insulating layer, ions including In, Zn, andZr are deposited from a target so that an IZO layer including Zr may beformed on the gate insulating layer.

According to still another aspect of the present invention, a flat paneldisplay (FPD) device may be constructed with a first substrate where aplurality of pixels are defined by a plurality of first and secondconductive lines and a TFT controls signals supplied to each of theplurality of pixels and a first electrode is coupled to the TFT, asecond substrate where a second electrode is formed and the secondsubstrate is spaced apart from the first substrate, and a liquid crystallayer injected into a sealed up space between the first electrode andthe second electrode. The TFT includes a gate electrode formed on thefirst substrate, an oxide semiconductor layer electrically insulatedfrom the gate electrode by a gate insulating layer, and the oxidesemiconductor layer including a channel region, a source region, and adrain region, and a source electrode and a drain electrode respectivelyelectrically contacting the source region and the drain region. Theoxide semiconductor layer may be formed of an IZO layer including Zr.

According to still another aspect of the present invention, a FPD devicemay be constructed with a first substrate on which an organic lightemitting diode (OLED) including a first electrode, an organic thin filmlayer, and a second electrode and a TFT for controlling the operation ofthe OLED is formed, and a second substrate provided to face the firstsubstrate. The TFT includes a gate electrode formed on the firstsubstrate, an oxide semiconductor layer eclectically insulated from thegate electrode by a gate insulating layer and including a channelregion, a source region, and a drain region, and a source electrode anda drain electrode respectively electrically contacting the source regionand the drain region. The oxide semiconductor layer may be formed of anIZO layer (indium zinc oxide layer) including Zr.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention, and many of the attendantadvantages thereof, will be readily apparent as the same becomes betterunderstood by reference to the following detailed description whenconsidered in conjunction with the accompanying drawings in which likereference symbols indicate the same or similar components, wherein:

FIG. 1 is a cross-sectional view illustrating a thin film transistor(TFT) constructed as the present invention;

FIGS. 2A through 2C are cross-sectional views illustrating a method ofmanufacturing the TFT constructed as the present invention;

FIG. 3 is a graph illustrating the electric characteristic of the TFTaccording to the amounts of O₂ and Zr;

FIG. 4 is a perspective view illustrating a flat panel display (FPD)including the TFT constructed as an embodiment of the present invention;

FIGS. 5A and 5B are respectively a plan view and a cross-sectional viewillustrating the FPD including the TFT constructed as another embodimentof the present invention; and

FIG. 6 is a cross-sectional view illustrating the organic light emittingdiode (OLED) of FIG. 5A.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, only certain exemplaryembodiments of the present invention have been shown and described,simply by way of illustration. As those skilled in the art wouldrealize, the described embodiments may be modified in various differentways, all without departing from the spirit or scope of the presentinvention. Accordingly, the drawings and description are to be regardedas illustrative in nature and not restrictive. In addition, when anelement is referred to as being “on” another element, it can be directlyon the another element or be indirectly on the another element with oneor more intervening elements interposed therebetween. Also, when anelement is referred to as being “connected to” another element, it canbe directly connected to the another element or be indirectly connectedto the another element with one or more intervening elements interposedtherebetween. Hereinafter, like reference numerals refer to likeelements.

FIG. 1 is a cross-sectional view illustrating a thin film transistor(TFT) constructed as the present invention.

A gate electrode 11 is formed on a substrate 10 formed of an insulatingmaterial. A buffer layer (not shown) can be formed between substrate 10and gate electrode 11.

A gate insulating layer 12 to cover gate electrode 11 is formed onsubstrate 10. An oxide semiconductor layer 13 is electrically insulatedfrom gate electrode 11 by gate insulating layer 12 and provides achannel region, a source region, and a drain region. Oxide semiconductorlayer 13 is formed on gate insulating layer 12. Oxide semiconductorlayer 13 is formed of an InZnO (IZO) layer including Zr so that thecarrier density of the IZO layer (indium zinc oxide layer) is controlledto be 1×10¹³ to 1×10¹⁸#cm⁻¹ (# is the number of carriers) by Zr.

A source electrode and a drain electrode 14 a and 14 b that contact thesource region and the drain region are formed on oxide semiconductorlayer 13.

FIGS. 2A to 2C are cross-sectional views illustrating a method ofmanufacturing the TFT constructed as the present invention. The TFTaccording to the present invention will be described in detail throughmanufacturing processes.

Referring to FIG. 2A, after forming gate electrode 11 on substrate 10formed of the insulating material, gate insulating layer 12 is formed ongate electrode 11. At this time, after forming a buffer layer (notshown) on substrate 10, gate electrode 11 may be formed on the bufferlayer. Gate electrode 11 is formed of metal such as Mo, MoW, and Al andgate insulating layer 12 is formed of SiO₂ or SiNx.

Referring to FIG. 2B, oxide semiconductor layer 13 that provides thechannel region, the source region, and the drain region to overlap gateelectrode 11, is formed on gate insulating layer 12. Oxide semiconductorlayer 13 is formed of the InZnO (IZO) layer including Zr so that thecarrier density of the IZO layer is controlled to be 1×10¹³ to1×10¹⁸#cm⁻³ (“#” refers to the number of carriers) by Zr. The InZnO(IZO) layer including Zr may be formed to be amorphous or crystallinesuch as nano crystal in accordance with a deposition method.

Ions including In, Zn, and Zr are deposited from a target so that an IZOlayer including Zr may be formed on gate insulating layer 12 as anembodiment of forming the IZO layer including Zr. An InZnO target and aZr target may be used as a target during the deposition process. Theamount of Zr is controlled by bias power applied to the target or theintensity of pulse laser so that the carrier density of the IZO layermay be controlled.

For example, in a co-sputtering method, the magnitude of the bias powerapplied to the Zr target is controlled or the intensity of the pulselaser radiated onto the Zr target is controlled so that the amount ofthe doped Zr may be controlled. When the amount (ratio) of the doped Zrin the ratio (In:Zn:Zr) of a cation is controlled to be no less than 20At %, it is assumed that the carrier density is no more than 1×10¹³#cm⁻³ in Hall measurement. Therefore, when the amount of doped Zr islinearly changed (decreasing) in a range of 20 to 0 At %, the carrierdensity may be increased to about 1×10²¹ #cm⁻³. “At %” here refers to anatomic percent.

Referring to FIG. 2C, a conductive layer is formed on oxidesemiconductor layer 13 and is patterned to form source electrode anddrain electrode 14 a and 14 b that contact the source region and thedrain region of oxide semiconductor layer 13.

In the oxide semiconductor such as the IZO, the amount of O₂ iscontrolled in a deposition process to control the carrier density sothat the oxide semiconductor layer has a semiconductor characteristic.It is however difficult to reduce the high carrier density (1×10²⁰ to1×10²¹#cm⁻³) of the IZO layer to the carrier density (1×10¹³ to1×10¹⁸#cm⁻³) by which the oxide semiconductor layer may have thesemiconductor characteristic by the practical processes.

According to the present invention, Zr is doped to easily reduce thehigh carrier density (1×10²⁰ to 1×10²¹#cm⁻³) of the IZO layer to thecarrier density (1×10¹³ to 1×10¹⁸ #cm⁻³) by which the oxidesemiconductor layer may have the semiconductor characteristic. That is,it is assumed that electric conductivity may be reduced since ZrO_(x)(Zr oxide) is formed so that the depletion of O₂ is reduced when the IZOlayer is doped with Zr. As described above, when the amount of Zr iscontrolled, it is possible to control the electric conductivity.

FIG. 3 is a graph illustrating the electric characteristic of the TFTaccording to the amounts of O₂ (i.e., oxygen, atomic weight of 16) andZr (i.e., Zirconium, atomic weight of 91.22). The amount of Zr isrepresented by a bias power (unit W: watt) applied to a Zr target.Curves ID, ID2 and ID3 represent the on/off characteristics of the TFTwhere the voltage applied between drain and source are respectively0.1V, 5.1 V and 10.1 V. The curves shown in FIG. 3 represent the on/offcharacteristics are changed in accordance with the amount of Zr, and theelectric characteristic of the TFT is determined by the on/offcharacteristics. The on/off characteristics of the TFT, as shown in FIG.3, are compared with each other through a change in drain current inaccordance with a gate voltage. It is noted from the graph that theelectric characteristic may be improved more when the amount of Zr isincreased than when the amount of O₂ is increased. That is, themagnitude of bias power applied to the Zr target is controlled toincrease the amount of Zr and to effectively reduce the carrier densityso that oxide semiconductor layer 13 has the semiconductorcharacteristic.

As described above, since oxide semiconductor layer 13 constructed asthe present invention is obtained by adding the transparent metal Zr tothe transparent semiconductor material IZO, oxide semiconductor layer 13is advantageous to manufacture of the transparent TFT and the TFTconstructed as the present invention may be applied to a liquid crystaldisplay (LCD) and organic light emitting display.

FIG. 4 is a perspective view illustrating a flat panel display (FPD)including the TFT constructed as an embodiment of the present invention.The FPD will be schematically described based on a display panel 100 fordisplaying an image.

Display panel 100 includes two substrates 110 and 120 provided to faceeach other and a liquid crystal layer 130 interposed between twosubstrates 110 and 120. A pixel region 113 is defined by a plurality ofgate lines 111 and data lines 112 arranged on a first substrate 110 in amatrix. TFTs 114 for controlling signals supplied to pixels and pixelelectrodes 115 coupled to TFTs 114 are formed on first substrate 110 inthe parts where gate lines 111 and data lines 112 intersect each other.

The TFT has the structure illustrated in FIG. 1 and may be manufacturedby a manufacturing method according to the present invention describedwith reference to FIGS. 2A to 2C.

In addition, a color filter 121 and a common electrode 122 are formed onsecond substrate 120. Polarizing plates 116 and 123 are formed on therear surfaces of two substrates 110 and 120 and a backlight (not shown)as a light source is provided under first polarizing plate 116.

On the other hand, a driver (integrated circuits for driving LCD; notshown) for driving display panel 100 is mounted around pixel region 113of display panel 100. The driver converts electric signals provided fromthe exterior into scan signals and data signals to supply the scansignals and the data signals to the gate lines and the data lines.

FIGS. 5A and 5B are respectively a plan view and a cross-sectional viewillustrating the FPD including the TFT according to the presentinvention according to another embodiment of the present invention. TheFPD will be schematically described based on a display panel 200 fordisplaying an image.

Referring to FIG. 5A, a substrate 210 includes a pixel region 220 and anon-pixel region 230 that surrounds pixel region 220. A plurality oforganic light emitting diodes (OLED) 300 electrically coupled to eachother in a matrix are formed between scan lines 224 and data lines 226on substrate 210 of pixel region 220. Scan lines 224 and data lines 226extended from scan lines 224 and data lines 226 of pixel region 220,power source supply lines (not shown) for operating OLEDs 300, and ascan driver 234 and a data driver 236 for processing the signalsprovided from the exterior through pads 228 to supply the processedsignals to scan lines 224 and data lines 226 are formed on substrate 210of non-pixel region 230.

Referring to FIG. 6, OLED 300 includes an anode electrode 317, a cathodeelectrode 320, and an organic thin film layer 319 formed between anodeelectrode 317 and cathode electrode 320. Organic thin film layer 319 hasa structure in which a hole transport layer, an organic light emittinglayer, and an electron transport layer are laminated and a holeinjecting layer and an electron injecting layer can be further included.In addition, a TFT for controlling the operation of OLED 300 and acapacitor for maintaining signals can be further included.

The TFT has the structure illustrated in FIG. 1 and can be manufacturedby the manufacturing method according to the present invention describedwith reference to FIGS. 2A to 2C.

OLED 300 including the above-described TFT will be described in detailwith reference to FIGS. 5A and 6.

Gate electrode 11 is formed on substrate 210. Here, scan lines 224electrically coupled to gate electrode 11 are formed in pixel region 220and scan lines 224 extended from scan lines 224 of pixel region 220 andpads 228 for receiving the signals from the exterior may be formed innon-pixel region 230.

Gate insulating layer 12 covering gate electrode 11 is formed onsubstrate 210. Oxide semiconductor layer 13 electrically insulated fromgate electrode 11 by gate insulating layer 12 to provide the channelregion, the source region, and the drain region is formed on gateinsulating layer 12. Oxide semiconductor layer 13 is formed of the IZOlayer including Zr and the carrier density of the IZO layer iscontrolled to be 1×10¹³ to 1×10¹⁸ #cm⁻¹ by Zr.

Source and drain electrodes 14 a and 14 b that contact the source anddrain regions are formed on oxide semiconductor layer 13. At this time,data lines 226 coupled to source and drain electrodes 14 a and 14 b canbe formed in pixel region 220 and data lines 226 extended from datalines 226 of pixel region 220 and pads 228 for receiving the signalsfrom the exterior may be formed in non-pixel region 230.

A planarizing layer 316 to cover source and drain electrodes 14 a and 14b is formed on gate insulating layer 12 and a via hole is formed inplanarizing layer 316 so that source or drain electrode 14 a or 14 b isexposed.

Anode electrode 317 electrically coupled to source or drain electrode 14a or 14 b through via hole 501 is formed and a pixel defining layer 318is formed on planarizing layer 316 so that a portion (an emissionregion) of anode electrode 317 is exposed. Organic thin film layer 319is formed on exposed anode electrode 317 and a cathode electrode 320 tocover organic thin film layer 319 is formed on pixel defining layer 318.

Referring to FIG. 5B, an encapsulating substrate 400 for sealing uppixel region 220 is provided on substrate 210 where OLED 300 is formed.Encapsulating substrate 400 and substrate 210 are attached to each otherby a sealing material 410 to complete display panel 200.

In the TFT constructed as the present invention, the oxide semiconductorlayer used as the active layer is formed of the IZO layer including Zrand the carrier density of the IZO layer is controlled to be 1×10¹³ to1×10¹⁸ #cm⁻³ by Zr. According to the present invention, Zr is doped toeasily reduce the high carrier density of the IZO layer so that oxidesemiconductor layer 13 may have the semiconductor characteristic.Therefore, manufacturing processes may be simplified and the electriccharacteristic of an element may be improved.

While the present invention has been described in connection withcertain exemplary embodiments, it is to be understood that the inventionis not limited to the disclosed embodiments, but, on the contrary, isintended to cover various modifications and equivalent arrangementsincluded within the spirit and scope of the appended claims, andequivalents thereof.

1-2. (canceled)
 3. A method of manufacturing a TFT, comprising: forminga gate electrode on a substrate; forming a gate insulating layercovering the gate electrode on the substrate; forming an oxidesemiconductor layer that provides a channel region, a source region, anda drain region on the gate insulating layer; and forming a sourceelectrode and a drain electrode that respectively contact the sourceregion and the drain region wherein the step of forming an oxidesemiconductor layer further comprising the steps of depositing ionsincluding In, Zn, and Zr from a target to form an IZO (indium zincoxide) layer comprising Zr on the gate insulating layer, and controllinga carrier density of the IZO layer by controlling an amount of Zr. 4.The method as claimed in claim 3, in which the target comprises an InZnOtarget and a Zr target.
 5. The method as claimed in claim 4, in which amagnitude of bias power applied to the Zr target is controlled tocontrol an amount of Zr.
 6. The method as claimed in claim 4, in whichan intensity of pulse laser radiated on the Zr target is controlled tocontrol an amount of Zr.
 7. The method as claimed in claim 3, in whichan amount of Zr is controlled so that a carrier density of the IZO layeris 1×10¹³ to 1×10¹⁸ #cm⁻³ by controlling the amount of Zr, where #refers to number of carriers.
 8. The method as claimed in claim 3, inwhich an amount of Zr is controlled in a range of from 20 At % to 0 At %arranged in a decreasing order. 9-12. (canceled)